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FDP120N10 N-Channel PowerTrench(R) MOSFET
March 2009
FDP120N10
N-Channel
Features
100V, 74A, 12m
PowerTrench(R)
tm
MOSFET
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
* RDS(on) = 9.7m ( Typ.)@ VGS = 10V, ID = 74A * Fast Switching Speed * Low Gate Charge * High Performance RDS(on) Trench Technology for Extremely Low
Application
* DC to DC Convertors / Synchronous Rectification
* High Power and Current Handling Capability * RoHS Compliant
D
G G DS
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) - Continuous (TC = 25oC) - Pulsed - Continuous (TC = 100oC) (Note 1) (Note 2) (Note 3) Ratings 100 20 74 52 296 198 5.8 170 1.14 -55 to +175 300 Units V V A A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink, Typ. Thermal Resistance, Junction to Ambient Ratings 0.88 0.5 62.5
o
Units C/W
(c)2009 Fairchild Semiconductor Corporation FDP120N10 Rev. A
1
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FDP120N10 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking FDP120N10 Device FDP120N10 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to VDS = 100V, VGS = 0V 25oC 100 0.1 1 500 100 V V/oC A nA
VDS = 100V, VGS = 0V,TC = 150oC VGS = 20V, VDS = 0V
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 74A VDS = 10V, ID = 74A
(Note 4)
2.5 -
9.7 105
4.5 12 -
V m S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V ID = 74A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5)
4215 405 170 66 26 20
5605 540 255 86 -
pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50V, ID = 74A VGS = 10V, RGEN = 4.7
(Note 4, 5)
-
27 105 39 15
64 220 88 40
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 74A VGS = 0V, ISD = 74A dIF/dt = 100A/s
(Note 4)
-
44 67
74 296 1.3 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.11mH, IAS = 60A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 74A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP120N10 Rev. A
2
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FDP120N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000 1000
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
500
ID, Drain Current[A]
100
ID, Drain Current[A]
100
175 C
o
-55 C
o
10
10
25 C
o
1 0.2 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 10
*Notes: 1. VDS = 10V 2. 250s Pulse Test
1 VDS, Drain-Source Voltage[V]
3
4
5 6 7 8 VGS, Gate-Source Voltage[V]
9
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.04
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
0.03
IS, Reverse Drain Current [A]
100
0.02
VGS = 10V
175 C
o
25 C
o
10
0.01
VGS = 20V
0.00
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
0
50
100 150 200 ID, Drain Current [A]
250
300
1 0.2
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
7000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 25V VDS = 50V VDS = 80V
5600 Capacitances [pF]
Ciss
8
4200
*Note: 1. VGS = 0V 2. f = 1MHz
6
2800
Coss
4
1400
Crss
2
*Note: ID =74A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0
0
20 40 60 Qg, Total Gate Charge [nC]
80
FDP120N10 Rev. A
3
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FDP120N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15
Figure 8. On-Resistance Variation vs. Temperature
2.8 RDS(on), [Normalized] Drain-Source On-Resistance 2.4 2.0 1.6 1.2 0.8 0.4 -100
*Notes: 1. VGS = 10V 2. ID = 74A
BVDSS, [Normalized] Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
0.90 -100
*Notes: 1. VGS = 0V 2. ID = 1mA
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
20s
Figure 10. Maximum Drain Current vs. Case Temperature
75
ID, Drain Current [A]
100
10
Operation in This Area is Limited by R DS(on)
10ms DC
ID, Drain Current [A]
100s 1ms
50
1
*Notes:
25
0.1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
0.01 0.1
1 10 VDS, Drain-Source Voltage [V]
100 200
0 25
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.2
0.1
0.1 0.05 0.02 0.01
PDM t1 t2
o
*Notes: 1. ZJC(t) = 0.88 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01
Single pulse
0.005 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDP120N10 Rev. A
4
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FDP120N10 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP120N10 Rev. A
5
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FDP120N10 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FDP120N10 Rev. A
6
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FDP120N10 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP120N10 Rev. A 7 www.fairchildsemi.com
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM*
(R)
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F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PowerTrench PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) *
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
(c) 2008 Fairchild Semiconductor Corporation
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